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2SD1615 PDF预览

2SD1615

更新时间: 2024-11-18 07:31:27
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
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描述
NPN Silicon Epitaxial Transistor

2SD1615 数据手册

  
SMD Type  
Transistors  
NPN Silicon Epitaxial Transistor  
2SD1615  
Features  
World Standard Miniature Package.  
Low VCE(sat) VCE(sat) = 0.15 V  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
Collector-emitter voltage  
50  
V
Emitter-base voltage  
6
V
Collector current (DC)  
1
A
Collector Current (pulse) *1  
Total power dissipation at 25 Ambient Temperature *2  
Junction temperature  
IC  
2
2.0  
A
PT  
W
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
* 1Pulse Test PW  
10ms, Duty Cycle  
50%.  
*2 When mounted on ceramic substrate of 16 cm2X 0.7 mm  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
ICBO  
Testconditons  
Min  
135  
Typ  
Max  
100  
100  
600  
0.3  
Unit  
nA  
VCB = 60 V, IE = 0 A  
VEB = 6.0 V, IC = 0 A  
VCE = 2.0 V, IC = 100 mA  
IEBO  
nA  
hFE  
290  
0.15  
0.9  
Collector saturation voltage *  
Base saturation voltage *  
Base-emitter voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = 1 A, IB = 50 mA  
VBE(sat) IC = 1 A, IB = 50 mA  
V
V
1.2  
VBE  
fT  
VCE = 2.0 V, IC = 50 mA  
600  
80  
700  
mV  
MHz  
pF  
VCE = 2.0 V, IE = -100 mA  
VCB = 10 V, IE = 0, f = 1.0 MHz  
160  
19  
Cob  
* Pulsed: PW  
350 ìs, duty cycle  
2%  
hFE Classification  
Marking  
hFE  
GM  
135 270  
GL  
200 400  
GK  
300 600  
1
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