Datasheet > 2SD1615A

2SD1615A

更新时间： 2024-10-14 12:47:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	52K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

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数据手册

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2SD1615A 数据手册

SMD Type

Transistors

NPN Silicon Epitaxial Transistor

2SD1615A

Features

World Standard Miniature Package.

Low VCE(sat) VCE(sat) = 0.15 V

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

120

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector Current (pulse) *1

Total power dissipation at 25 Ambient Temperature*2

Junction temperature

I^C

2.0

P^T

T^j

150

Storage temperature

Tstg

-55 to +150

*1 Pulse Test PW

10ms, Duty Cycle

50%.

*2 When mounted on ceramic substrate of 16 cm²X 0.7 mm

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

I^CBO

Testconditons

Min

135

Typ

Max

100

400

0.3

Unit

VCB = 120 V, IE = 0 A

VEB = 6.0 V, IC = 0 A

VCE = 2.0 V, IC = 100 mA

I^EBO

h^FE

Collector saturation voltage *

Base saturation voltage *

Base-emitter voltage *

Gain bandwidth product

Output capacitance

V^CE(sat)IC = 1 A, IB = 50 mA

V^BE(sat)IC = 1 A, IB = 50 mA

0.15

0.9

1.2

V^BE

f^T

VCE = 2.0 V, IC = 50 mA

600

700

MHz

VCE = 2.0 V, IE = -100 mA

VCB = 10 V, IE = 0, f = 1.0 MHz

160

C^ob

* Pulsed: PW

350 ìs, duty cycle

hFE Classification

Marking

hFE

135 270

200 400

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