Datasheet > 2SD1615AGQ

2SD1615AGQ

更新时间： 2024-11-17 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	54K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 1A I(C) \| TO-243

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1615AGQ 数据手册

DATA SHEET

SILICON TRANSISTORS

2SD1615, 2SD1615A

NPN SILICON EPITAXIAL TRANSISTORS

POWER MINI MOLD

DESCRIPTION

2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid

Integrated Circuits.

FEATURES

PACKAGE DIMENSIONS

•

World Standard Miniature Package

Low V^{CE (sat)}VCE(sat) = 0.15 V

in millimeters

•

Complement to 2SB1115, 2SD1115A

4.5±0.1

1.5±0.1

1.6±0.2

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Currents (T

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

= 25°C)

2SD1615 2SD1615A

VCBO

120

V^CEO

VEBO

I^C

Collector Current (DC)

0.42

Collector Current (Pulse)

Maximum Power Dissipation

Total Power Dissipation

at 25°C Ambient Temperature

Maximum Temperatures

0.42±0.06

±0.06

0.47

±0.06

3.0

1.5

+0.03

0.41_{– 0.05}

2.0

Junction Temperature

Storage Temperature Range

T^j

T^stg

150

–55 to +150

°C

1. Emitter

2. Collector

3. Base

PW ≤ 10 ms, Duty Cycle ≤ 50%

When mounted on ceramic substrate of 16 cm²× 0.7 mm

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC

SYMBOL MIN. TYP. MAX. UNIT

TEST CONDITIONS

VCB = 60 V, IE = 0

VCB = 120 V, IE = 0

Collector Cutoff Current

ICBO

100

600

400

2SD1615

2SD1615A

VEB = 6.0 V, IC = 0

Emitter Cutoff Current

DC Current Gain

IEBO

hFE1

135

290

2SC1615

VCE = 2.0 V, IC = 100 mA

2SD1615A

DC Current Gain

hFE2

VCE(sat)

VBE(sat)

VBE

270

0.15

0.9

VCE = 2.0 V, IC = 1.0 A

IC = 1.0 A, IB = 50 mA

VCE = 2.0 V, IC = 50 mA

Collector Saturation Voltage

Base Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

0.3

1.2

700

600

160

MHz VCE = 2.0 V, IE = –100 mA

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %

hFE Classification

MARKING

2SD1615

2SD1615A

hFE

135 to 270

200 to 400

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Document No. D10198EJ4V0DS00 (4th edition)

Date Published December 2000 N CP(K)

Printed in Japan

1985

12 3 4

中文翻译

下载PDF

与2SD1615AGQ相关器件

型号	品牌	获取价格	描述	数据表
2SD1615A-GQ	RENESAS	获取价格	1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN
2SD1615A-P	KEXIN	获取价格	NPN Transistors
2SD1615A-Q	KEXIN	获取价格	NPN Transistors
2SD1615A-T1	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MI
2SD1615A-T1GP	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
2SD1615A-T1GQ	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
2SD1615A-T2	NEC	获取价格	1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
2SD1615A-T2GQ	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL
2SD1615GK	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-243
2SD1615GK-AZ	NEC	获取价格	暂无描述

与2SD1615AGQ相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

2SD1615AGQ

2SD1615AGQ 数据手册

与2SD1615AGQ相关器件

与2SD1615AGQ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SD1615AGQ

2SD1615AGQ 数据手册

与2SD1615AGQ相关器件

与2SD1615AGQ相关文章

您还可以找

您在本页遇到什么问题？