2SD1616

更新时间： 2024-11-20 22:52:47

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	148K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册
替代型号

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2SD1616 数据手册

UTC 2SD1616/A

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON

TRANSISTOR

DESCRIPTION

*Audio frequency power amplifier

*Medium speed switching

TO-92

1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

Tstg

VALUE

UNIT

°C

Storage Temperature

-55 ~+150

Junction Temperature

150

750

120

°C

Total Power Dissipation (Ta=25°C)

Collector to Base Voltage: D1616

D1616A

VCBO

Collector to Emitter Voltage: D1616

D1616A

VCEO

Emitter to Base Voltage

Collector Current (DC)

VEBO

Collector Current (*Pulse)

Note: (*) Pulse width≤10ms, Duty cycle<50%

CHARACTERISTICS (Ta=25°C)

CHARACTERISTIC

Collector Cut-Off Current

Emitter Cut-Off Current

SYMBOL

ICBO

IEBO

TEST CONDITIONS

MIN. TYP. MAX. UNIT

VCB=60V

VEB= 6V

100

0.3

Collector-Emitter Saturation Voltage VCE(SAT)

IC=1A, IB=50mA

VCE=2V, IC=50mA

VCE=2V, IC=100mA

0.15

0.9

Base-Emitter Saturation Voltage

Base Emitter On Voltage

DC Current Gain: D1616

D1616A

VBE(SAT)

VBE(ON)

hFE1

1.2

600

135

640

700

600

400

hFE2

VCE=2V, IC=1A

VCE=2V, IC=100mA

VCB=10V, f=1MHz

VCE=10V, IC=100mA

Current Gain Bandwidth Product

Output Capacitance

100

160

MHz

Cob

ton

Turn On Time

0.07

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-008,A

12 3

中文翻译

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2SD1616 替代型号

型号	品牌	替代类型	描述	数据表
2SD1616AG-G-T92-B	UTC	功能相似	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HA
2SD1616AG-G-AB3-R	UTC	功能相似	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F

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