生命周期: | Active | 零件包装代码: | SOT-89 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.27 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 160 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1616A-G-AB3-T | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR | |
2SD1616A-G-G03-B | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR | |
2SD1616A-G-G03-K | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR | |
2SD1616A-G-G03-R | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR | |
2SD1616A-G-G03-T | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR | |
2SD1616AG-G-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F | |
2SD1616AG-G-T92-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HA | |
2SD1616AG-L-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F | |
2SD1616AG-L-T9S-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92SP, | |
2SD1616A-G-T92-B | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR |