2SD1615GK-AZ

更新时间： 2024-02-07 13:58:11

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管
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4页	52K
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2SD1615GK-AZ 数据手册

DATA SHEET

SILICON TRANSISTORS

2SD1615, 2SD1615A

NPN SILICON EPITAXIAL TRANSISTORS

POWER MINI MOLD

DESCRIPTION

2SD1615, 1615A are designed for audio frequency power am plifier and switching application, especially

in Hybrid Integrated Circuits.

FEATURES

PACKAGE DIMENSIONS

•

World Standard Miniature Package

Low V^{CE (sat)}VCE(sat) = 0.15 V

in m illim eters

•

Com plem ent to 2SB1115, 2SD1115A

4.5± 0.1

1.6± 0.2

ABSOLUTE MAXIMUM RATINGS

1.5± 0.1

Maxim um Voltages and Currents (T

Collector to Base Voltage

Collector to Em itter Voltage

Em itter to Base Voltage

= 25 ˚C) 2SD1615 2SD1615A

VCBO

V^CEO

VEBO

I^C

120

Collector Current (DC)

Collector Current (Pulse)*

Maxim um Power Dissipation

Total Power Dissipation

at 25 ˚C Am bient Tem perature** P^T

Maxim um Tem peratures

I^C

0.42

0.42± 0.06

± 0.06

0.47

1.5

± 0.06

+ 0.03

– 0.05

2.0

0.41

3.0

J unction Tem perature

Storage Tem perature Range

T^j

T^stg

150

–55 to +150

˚C

1. Emitter

2. Collector

3. Base

* PW ≤ 10 m s, Duty Cycle ≤ 50 %

** When m ounted on ceram ic substrate of 16 cm ²× 0.7 m m

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL MIN. TYP. MAX. UNIT

TEST CONDITIONS

VCB = 60 V, IE = 0

VCB = 120 V, IE = 0

Collector Cutoff Current

ICBO

100

600

400

2SD1615

2SD1615A

Em itter Cutoff Current

DC Current Gain

IEBO

VEB = 6.0 V, IC = 0

hFE1***

135

290

2SC1615

VCE = 2.0 V, IC = 100 m A

2SD1615A

DC Current Gain

hFE2***

VCE(sat)***

VBE(sat)***

VBE***

270

0.15

0.9

VCE = 2.0 V, IC = 1.0 A

IC = 1.0 A, IB = 50 m A

VCE = 2.0 V, IC = 50 m A

Collector Saturation Voltage

Base Saturation Voltage

Base to Em itter Voltage

Gain Bandwidth Product

Output Capacitance

0.3

1.2

600

700

m V

160

MHz VCE = 2.0 V, IE = –100 m A

CB = 10 V, I = 0, f = 1.0 MHz

*** Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %

h^FEClassification

MARKING

2SD1615

2SD1615A

h FE

135 to 270

200 to 400

300 to 600

Document No. D10198EJ3V0DSD0 (3rd edition)

(Previous No. TC-5810A)

Date Published June 1995 P

Printed in Japan

1985

12 3 4

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