Datasheet > 2SD1615GM

2SD1615GM

更新时间： 2024-11-17 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	54K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-243

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数据手册

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2SD1615GM 数据手册

DATA SHEET

SILICON TRANSISTORS

2SD1615, 2SD1615A

NPN SILICON EPITAXIAL TRANSISTORS

POWER MINI MOLD

DESCRIPTION

2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid

Integrated Circuits.

FEATURES

PACKAGE DIMENSIONS

•

World Standard Miniature Package

Low V^{CE (sat)}VCE(sat) = 0.15 V

in millimeters

•

Complement to 2SB1115, 2SD1115A

4.5±0.1

1.5±0.1

1.6±0.2

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Currents (T

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

= 25°C)

2SD1615 2SD1615A

VCBO

120

V^CEO

VEBO

I^C

Collector Current (DC)

0.42

Collector Current (Pulse)

Maximum Power Dissipation

Total Power Dissipation

at 25°C Ambient Temperature

Maximum Temperatures

0.42±0.06

±0.06

0.47

±0.06

3.0

1.5

+0.03

0.41_{– 0.05}

2.0

Junction Temperature

Storage Temperature Range

T^j

T^stg

150

–55 to +150

°C

1. Emitter

2. Collector

3. Base

PW ≤ 10 ms, Duty Cycle ≤ 50%

When mounted on ceramic substrate of 16 cm²× 0.7 mm

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC

SYMBOL MIN. TYP. MAX. UNIT

TEST CONDITIONS

VCB = 60 V, IE = 0

VCB = 120 V, IE = 0

Collector Cutoff Current

ICBO

100

600

400

2SD1615

2SD1615A

VEB = 6.0 V, IC = 0

Emitter Cutoff Current

DC Current Gain

IEBO

hFE1

135

290

2SC1615

VCE = 2.0 V, IC = 100 mA

2SD1615A

DC Current Gain

hFE2

VCE(sat)

VBE(sat)

VBE

270

0.15

0.9

VCE = 2.0 V, IC = 1.0 A

IC = 1.0 A, IB = 50 mA

VCE = 2.0 V, IC = 50 mA

Collector Saturation Voltage

Base Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

0.3

1.2

700

600

160

MHz VCE = 2.0 V, IE = –100 mA

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %

hFE Classification

MARKING

2SD1615

2SD1615A

hFE

135 to 270

200 to 400

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Document No. D10198EJ4V0DS00 (4th edition)

Date Published December 2000 N CP(K)

Printed in Japan

1985

12 3 4

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