SMD Type
Transistors
NPN Transistors
2SD1615
1.70 0.1
■ Features
● Low VCE(sat)
● Complementary to 2SB1115
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
60
50
6
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
I
C
1
A
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
(Note.1)
I
CP
2
P
C
2
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
50
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 uA, I
E= 0
Ic= 1 mA,I = 0
B
I
E
= 100 uA, I
C= 0
I
CBO
EBO
V
V
CB= 60 V , I
EB= 6V , I
E
= 0
0.1
0.1
0.3
1.2
0.7
600
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=1 A, I
B
=50 mA
=50 mA
0.15
0.9
V
C
=1 A, I
B
V
BE
V
V
V
V
V
CE= 2V, I
CE= 2V, I
CE= 2V, I
C= 50 mA
C= 100 mA
C= 1 A
0.6
135
81
290
270
19
DC current gain
hFE
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
E= 0,f=1MHz
pF
f
CE= 2V, I = -100mA
E
80
160
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1615-M
135-270
GM
2SD1615-L
200-400
GL
2SD1615-K
300-600
GK
1
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