Datasheet > 2SD1615-L

2SD1615-L

更新时间： 2024-11-19 01:07:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1209K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1615-L 数据手册

SMD Type

Transistors

NPN Transistors

2SD1615

1.70 0.1

■ Features

● Low VCE(sat)

● Complementary to 2SB1115

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

℃

150

Storage Temperature Range

stg

-55 to 150

Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 uA， I

E= 0

Ic= 1 mA，I = 0

= 100 uA， I

C= 0

CBO

EBO

CB= 60 V , I

^EB= 6V , I

= 0

0.1

0.3

1.2

0.7

600

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=1 A, I

=50 mA

0.15

0.9

=1 A, I

^CE= 2V, I

CE= 2V, I

C= 50 mA

C= 100 mA

C= 1 A

0.6

135

290

270

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= 10V, I

E= 0,f=1MHz

^CE= 2V, I = -100mA

160

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1615-M

135-270

2SD1615-L

200-400

2SD1615-K

300-600

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