Datasheet > 2SD1615A-Q

2SD1615A-Q

更新时间： 2024-11-19 01:14:15

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页数	文件大小	规格书
3页	1257K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1615A-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD1615A

1.70 0.1

■ Features

● Low VCE(sat)

● Complementary to 2SB1115A

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

120

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

℃

150

Storage Temperature Range

stg

-55 to 150

Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

120

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 uA， I

Ic= 1 mA，I = 0

= 100 uA， I = 0

CB= 120 V , I = 0

^EB= 6V , I =0

E= 0

CBO

EBO

0.1

0.3

1.2

0.7

400

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=1 A, I

=50 mA

0.15

0.9

=1 A, I

^CE= 2V, I

CE= 2V, I

C= 50 mA

C= 100 mA

C= 1 A

0.6

135

DC current gain

hFE

270

Collector output capacitance

Transition frequency

CB= 10V, I

E= 0,f=1MHz

^CE= 2V, I = -100mA

160

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1615A-Q

135-270

2SD1615A-P

200-400

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