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2SC5949O(Q) PDF预览

2SC5949O(Q)

更新时间: 2024-11-04 13:04:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体
页数 文件大小 规格书
4页 135K
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2SC5949O(Q) 数据手册

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2SC5949  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC5949  
Power Amplifier Applications  
Unit: mm  
Complementary to 2SA2121  
Recommended for audio frequency amplifier output stage.  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
200  
200  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
15  
A
C
Base current  
I
B
1.5  
A
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
220  
W
°C  
°C  
C
T
150  
j
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
2-21F1A  
Weight: 9.75 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
1
2006-11-16  

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