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2SC5974B PDF预览

2SC5974B

更新时间: 2024-09-30 04:26:11
品牌 Logo 应用领域
谏早电子 - ISAHAYA 晶体晶体管
页数 文件大小 规格书
4页 78K
描述
SMALL-SIGNAL TRANSISTOR

2SC5974B 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SC5974B 数据手册

 浏览型号2SC5974B的Datasheet PDF文件第2页浏览型号2SC5974B的Datasheet PDF文件第3页浏览型号2SC5974B的Datasheet PDF文件第4页 
SMALL-SIGNAL TRANSISTOR〉  
2S C 5974B  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
OUTLINE DRAWING  
DESCRIPTION  
Unit:mm  
ISAHAYA 2SC5974B is a mini package resin sealed  
silicon NPN epitaxial transistor for muting and switching.  
application  
4.0  
0.1  
FEATURE  
0.45  
High Emitter to Base voltage  
High Reverse hFE  
VEBO=40V  
Low ON RESISTANCE. RON =0.75Ω  
Small packege for mounting  
1.27 1.27  
APPLICATION  
For muting, switching application  
TERMINAL CONNECTOR  
1 : EMITTER  
EIJA: -  
2
: COLLECTOR  
: BASE  
3
MAXIMUM RATINGS (Ta=25℃)  
Parameter  
Ratings  
Symbol  
Unit  
VCBO  
VCEO  
VEBO  
I C  
V
V
Collector to Base voltage  
40  
9
40  
Collector to Emitter voltage  
Emitter to Base voltage  
V
Collector current  
Collector dissipation  
Junction temperature  
Storage temprature  
200  
mA  
mW  
PC  
450  
Tj  
+125  
Tstg  
-55 ~ +125  
ELECTRICAL CHARACTERISTICS (Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test conditions  
Unit  
Min  
Max  
0.1  
0.1  
I CBO  
I EBO  
Collector cut off current  
Emitter cut off current  
VCB=40V, I E=0m A  
μA  
μA  
VEB=40V, IC=0m A  
VCE=2V, I C=4m A  
hFE  
2200  
DC forward current gain  
C to E saturation voltage  
700  
VCE(sat)  
mV  
M Hz  
pF  
I C=30mA, I B=3m A  
25  
150  
3.0  
VCE=6V, I C=4m A  
fT  
Gain bandwidth product  
VCB=10V, I E=0m A, f=1M Hz  
Cob  
Collector output capacitance  

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