Datasheet > 2SC5976(TE85L)

2SC5976(TE85L)

更新时间： 2024-01-15 07:19:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	182K
描述
TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),SOT-346

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技术参数
数据手册

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2SC5976(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	250
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SC5976(TE85L) 数据手册

2SC5976

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5976

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Flash Applications

+0.2

2.8-0.3

+0.2

1.6-0.1

•

High DC current gain: h

= 250 to 400 (I = 0.3 A)

FE C

Low collector-emitter saturation voltage: V

= 0.14 V (max)

CE (sat)

High-speed switching: t = 25 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

1.Base

2.Emitter

3.Collector

3.0

Collector current

Base current

JEDEC

―

5.0

Pulse

JEITA

―

0.3

TOSHIBA

2－3S1C

1.00

0.625

150

Collector power dissipation (t=10s)

Total collector power dissipation (DC)

Junction temperature

(Note.1)

°C

Storage temperature range

stg

−55 to 150

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-13

12 3 4 5

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