5秒后页面跳转
2SC5993 PDF预览

2SC5993

更新时间: 2024-11-04 06:20:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 224K
描述
Silicon NPN Power Transistor

2SC5993 数据手册

 浏览型号2SC5993的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC5993  
DESCRIPTION  
·Good Linearity of hFE  
·High Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 180V(Min)  
·Complement to Type 2SA2140  
APPLICATIONS  
·Power amplification  
·For TV VM circuit  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
180  
180  
6
UNIT  
V
V
V
A
A
Collector Current-Continuous  
Collector Current-Peak  
1.5  
ICM  
3.0  
Collector Power Dissipation  
@ Ta=25℃  
2.0  
PC  
W
Collector Power Dissipation  
@TC=25℃  
20  
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

与2SC5993相关器件

型号 品牌 获取价格 描述 数据表
2SC5993P ISC

获取价格

暂无描述
2SC5993Q ISC

获取价格

Transistor
2SC5994 SANYO

获取价格

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
2SC5994 ONSEMI

获取价格

Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP
2SC5994-TD-E ONSEMI

获取价格

Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP
2SC5996 ISAHAYA

获取价格

SMALL-SIGNAL TRANSISTOR
2SC5996A ISAHAYA

获取价格

SMALL-SIGNAL TRANSISTOR
2SC5996AB ISAHAYA

获取价格

Transistor
2SC5996B ISAHAYA

获取价格

SMALL-SIGNAL TRANSISTOR
2SC5998 RENESAS

获取价格

Silicon NPN Epitaxial High Frequency Medium Power Amplifier