2SC5998YC

更新时间： 2024-11-03 23:14:07

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
11页	98K
描述
Silicon NPN Epitaxial High Frequency Medium Power Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5998YC 数据手册

2SC5998

Silicon NPN Epitaxial

High Frequency Medium Power Amplifier

REJ03G0169-0100Z

Rev.1.00

Apr.20.2004

Features

•

High Transition Frequency

f_T= 11 GHz typ.

•

High gain and Excellent Efficiency

Maximum Available Gain (MAG) = +22 dB typ. at V_CE= 3.6 V, I_C= 100 mA, f = 500 MHz

Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz

High Collector to Emitter Voltage

•

_CEO= 5 V

Ideal for up to 2GHz applications.

e.g FRS(Family Radio Service) Power Amplifier ,

GMRS (General Mobile Radio Service) Driver Amplifier

Outline

MPAK

1. Collector

2. Base

3. Emitter

Note: Marking is “YC-”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.5

500

700^note

°C

Collector power dissipation

Junction temperature

Storage temperature

150

Tstg

–55 to +150

Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )

Rev.1.00, Apr.20.2004, page 1 of 10

12 3 4 5 6 7...11

中文翻译

下载PDF

与2SC5998YC相关器件

型号	品牌	获取价格	描述	数据表
2SC5998YC-TL-E	RENESAS	获取价格	2SC5998YC-TL-E
2SC5999	SANYO	获取价格	NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
2SC6000	TOSHIBA	获取价格	High Speed Switching Applications DC-DC Converter Applications
2SC6000(TE16L1-NQ)	TOSHIBA	获取价格	Power Bipolar Transistor
2SC6010	TOSHIBA	获取价格	Silicon NPN Triple Diffused Type
2SC6011	ALLEGRO	获取价格	Audio Amplification Transistor
2SC6011	ISC	获取价格	isc Silicon NPN Power Transistor
2SC6011A	ALLEGRO	获取价格	Audio Amplification Transistor
2SC6011AO	ALLEGRO	获取价格	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SC6011AO	ISC	获取价格	暂无描述