2SC5996B

更新时间： 2024-11-03 22:52:47

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	76K
描述
SMALL-SIGNAL TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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2SC5996B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SC5996B 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2S C 5996

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

Unit : mm

OUTLINE DRAWING

DESCRIPTION

ISAHAYA 2SC5996 is a super mini package resin sealed

silicon NPN epitaxial transistor for muting and switching.

application

2.1

0.425

①

②

FEATURE

③

・High Emitter to Base voltage

・High Reverse hFE

VEBO=50V

・Low ON RESISTANCE. RON=1Ω

・Small packege for mounting

APPLICATION

JEITA SC-70

For muting, switching application

TERMINALꢀCONNECTOR

ꢀꢀꢀꢀꢀ①：BASE

ꢀꢀꢀꢀꢀ②：EMITTER

ꢀꢀꢀꢀꢀ③：COLLECTOR

MAXIMUM RATINGS (Ta=25℃)

Parameter

Ratings

Symbol

Unit

VCBO

VCEO

VEBO

I C

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

MARKING

200

℃

5 A

Collector dissipation

Junction temperature

Storage temprature

150

+125

-55 ～ +125

hFE ITEM

TYPE NAME

Tstg

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Limits

Typ

Symbol

Parameter

Test conditions

Unit

Min

Max

0.1

I CBO

I EBO

Collector cut off current

Emitter cut off current

DC forward current gain

C to E saturation voltage

Gain bandwidth product

Collector output capacitance

VCB=50V, I E=0mA

μA

VEB=50V, IC=0mA

VCE=2V, I C=4mA

hFE

200

1200

VCE(sat)

MHz

I C=30mA, I B=3mA

VCE=6V, I C=4mA

VCB=10V, I E=0mA, f=1MHz

Cob

5.0

Item

hFE

200 to 700 350 to 1200

Marking

12 3 4

中文翻译

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