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2SC6010 PDF预览

2SC6010

更新时间: 2024-11-04 03:56:35
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关
页数 文件大小 规格书
5页 182K
描述
Silicon NPN Triple Diffused Type

2SC6010 技术参数

是否无铅:不含铅生命周期:Active
包装说明:LEAD FREE, 2-7D101A, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.55
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:285 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):3240 ns
Base Number Matches:1

2SC6010 数据手册

 浏览型号2SC6010的Datasheet PDF文件第2页浏览型号2SC6010的Datasheet PDF文件第3页浏览型号2SC6010的Datasheet PDF文件第4页浏览型号2SC6010的Datasheet PDF文件第5页 
2SC6010  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC6010  
High Voltage Switching Applications  
Unit: mm  
Switching Regulator Applications  
DC-DC Converter Applications  
High speed switching: t = 0.24μs (max) (I = 0.3A)  
f C  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
600  
600  
285  
8
V
V
V
V
CBO  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CEX  
CEO  
EBO  
V
V
1. Base  
2. Collector  
3. Emitter  
DC  
I
1.0  
2.0  
0.5  
C
Collector current  
A
Pulse  
I
CP  
Base current  
I
A
B
JEDEC  
JEITA  
Collector power  
dissipation  
Ta = 25°C  
P
1.0  
W
C
Junction temperature  
T
150  
°C  
°C  
TOSHIBA  
Weight:  
2-7D101A  
j
Storage temperature range  
T
stg  
55 to 150  
g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-13  

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