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2SC5974 PDF预览

2SC5974

更新时间: 2024-11-04 04:26:11
品牌 Logo 应用领域
谏早电子 - ISAHAYA 晶体晶体管
页数 文件大小 规格书
4页 89K
描述
SMALL-SIGNAL TRANSISTOR

2SC5974 数据手册

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SMALL-SIGNAL TRANSISTOR〉  
2S C 5974  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
OUTLINE DRAWING  
DESCRIPTION  
Unit:mm  
ISAHAYA 2SC5974 is a mini package resin sealed  
silicon NPN epitaxial transistor for muting and switching.  
application  
4.0  
0.1  
FEATURE  
0.45  
High Emitter to Base voltage  
High Reverse hFE  
VEBO=50V  
Low ON RESISTANCE. RON=1Ω  
Small packege for mounting  
1.27 1.27  
APPLICATION  
For muting, switching application  
TERMINAL CONNECTOR  
: EMITTER  
: COLLECTOR  
: BASE  
1
2
EIJA: -  
3
MAXIMUM RATINGS (Ta=25℃)  
Parameter  
Ratings  
Symbol  
VCBO  
Unit  
V
V
50  
12  
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
VCEO  
VEBO  
I C  
50  
V
200  
mA  
mW  
PC  
Collector dissipation  
Junction temperature  
Storage temprature  
450  
Tj  
+125  
-55 ~ +125  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test conditions  
Unit  
Min  
Max  
0.1  
I CBO  
I EBO  
Collector cut off current  
Emitter cut off current  
VCB=50V, I E=0mA  
μA  
μA  
VEB=50V, IC=0mA  
VCE=2V, I C=4mA  
0.1  
hFE  
DC forward current gain  
C to E saturation voltage  
200  
1200  
VCE(sat)  
I C=30mA, I B=3mA  
30  
30  
mV  
MHz  
pF  
VCE=6V, I C=4mA  
fT  
Gain bandwidth product  
VCB=10V, I E=0mA, f=1MHz  
Cob  
Collector output capacitance  
5.0  
Item  
B
A
hFE  
350 to 1200  
200 to 700  

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