Ordering number : ENN7613
2SC5957
NPN Triple Diffused Planar Silicon Transistor
2SC5957
Switching Regulator Applications
Features
Package Dimensions
unit : mm
2010C
•
High breakdown voltage and high reliability.
•
High-speed switching.
•
Wide ASO.
[2SC5957]
•
Adoption of MBIT process.
10.2
4.5
3.6
5.1
1.3
1.2
0.8
0.4
1 : Base
2 : Collector
3 : Emitter
1
2
3
Specifications
2.55
2.55
SANYO : TO-220
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
CBO
V
CEO
V
EBO
500
V
V
400
7
V
I
10
A
C
Collector Current (Pulse)
Base Current
I
PW≤300µs, duty cycle≤10%
Tc=25°C
20
3.5
A
CP
I
B
A
1.75
W
W
°C
°C
Collector Dissipation
P
C
50
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
10
Collector Cutoff Current
Emitter Cutoff Current
I
V
V
=400V, I =0
µA
µA
CBO
CB
E
I
=5V, I =0
10
EBO
EB
C
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504KB TS IM TA-100659 No.7613-1/4