Datasheet > 2SC5949-R

2SC5949-R

更新时间： 2024-11-04 05:26:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	128K
描述
TRANSISTOR 15 A, 200 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-21F1A, 3 PIN, BIP General Purpose Power

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2SC5949-R 数据手册

2SC5949

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5949

Power Amplifier Applications

Unit: mm

•

Complementary to 2SA2121

Recommended for audio frequency amplifier output stage.

Absolute Maximum Ratings (Tc = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

200

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

1.5

Collector power dissipation

Junction temperature

Storage temperature range

220

°C

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2006-11-16

12 3 4

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2SC5954Q	PANASONIC	获取价格	Silicon NPN triple diffusion planar type For power amplification with high forward current
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