2SC5949O(Q)

更新时间： 2024-11-03 13:04:19

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东芝 - TOSHIBA		晶体
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2SC5949O(Q) 数据手册

2SC5949

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5949

Power Amplifier Applications

Unit: mm

•

Complementary to 2SA2121

Recommended for audio frequency amplifier output stage.

Absolute Maximum Ratings (Tc = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

200

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

1.5

Collector power dissipation

Junction temperature

Storage temperature range

220

°C

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2006-11-16

12 3 4

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