5秒后页面跳转
2SC5887 PDF预览

2SC5887

更新时间: 2024-11-10 22:52:47
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
5页 41K
描述
High-Current Switching Applications

2SC5887 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):180JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz

2SC5887 数据手册

 浏览型号2SC5887的Datasheet PDF文件第2页浏览型号2SC5887的Datasheet PDF文件第3页浏览型号2SC5887的Datasheet PDF文件第4页浏览型号2SC5887的Datasheet PDF文件第5页 
Ordering number : ENN7495  
PNP / NPN Epitaxial Planar Silicon Transistors  
2SA2098 / 2SC5887  
High-Current Switching Applications  
Package Dimensions  
Applications  
Relay drivers, lamp drivers, motor drivers.  
unit : mm  
2041A  
[2SA2098 / 2SC5887]  
Features  
4.5  
10.0  
Adoption of MBIT processes.  
2.8  
Large current capacitance.  
3.2  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
2.4  
1.6  
1.2  
0.7  
0.75  
1
2
3
1 : Base  
2 : Collector  
3 : Emitter  
2.55  
2.55  
Specifications  
( ) : 2SA2098  
2.55  
2.55  
SANYO : TO-220ML  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
CBO  
V
CEO  
V
EBO  
(--50)60  
(--)50  
(--)6  
V
V
V
I
(--)15  
(--)20  
(--)3  
A
C
Collector Current (Pulse)  
Base Current  
I
A
CP  
I
B
A
2
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
30  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=(--)40V, I =0  
Unit  
min  
typ  
max  
(--)10  
I
V
CB  
V
EB  
V
CE  
V
CE  
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=(--)4V, I =0  
(--)10  
EBO  
C
h
FE  
=(--)2V, I =(--)1A  
180  
(400)560  
C
Gain-Bandwidth Product  
f
T
=(--)10V, I =(--)1A  
(200)300  
MHz  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
22004 TS IM TA-3725, 3726 No.7495-1/5  

与2SC5887相关器件

型号 品牌 获取价格 描述 数据表
2SC5888 SANYO

获取价格

High-Current Switching Applications
2SC5889 UTC

获取价格

DC/DC CONVERTER APPLICATIONS
2SC5889 SANYO

获取价格

2SC5889
2SC5890 RENESAS

获取价格

Silicon NPN Epitaxial UHF / VHF wide band amplifier
2SC5890 NJSEMI

获取价格

Trans GP BJT NPN 12V 0.075A 3-Pin MPAK
2SC5894 RENESAS

获取价格

Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
2SC5894WJ-TL-E RENESAS

获取价格

HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SC-82A, CMPAK-4
2SC5895 PANASONIC

获取价格

Silicon NPN epitaxial planar type
2SC5895 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SC5895 ISC

获取价格

Silicon NPN Power Transistors