Datasheet > 2SC5895

2SC5895

更新时间： 2024-02-16 09:29:41

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描述
Silicon NPN epitaxial planar type

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技术参数
数据手册

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2SC5895 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

2SC5895 数据手册

Power Transistors

2SC5895

Silicon NPN epitaxial planar type

Unit: mm

4.6 0.2

Power supply for Audio & Visual equipments

such as TVs and VCRs

9.9 0.3

2.9 0.2

Industrial equipments such as DC-DC converters

φ 3.2 0.1

■ Features

• High-speed switching (t_stg: storage time/t_f: fall time is short)

• Low collector-emitter saturation voltage V_CE(sat)

• Superior forward current transfer ratio h_FElinearity

• TO-220D built-in: Excellent package with withstand voltage 5 kV

guaranteed

1.4 0.2

1.6 0.2

2.6 0.1

0.8 0.1

0.55 0.15

2.54 0.30

5.08 0.50

■ Absolute Maximum Ratings T_C= 25°C

1: Base

2: Collector

3: Emitter

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

TO-220D-A1 Package

Marking Symbol: C5895

Internal Connection

Collector current

I_C

I_CP

P_C

Peak collector current

T_C= 25°C

T_a= 25°C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

I_C= 10 mA, I_B= 0

V_CB= 60 V, I_E= 0

V_CE= 60 V, I_B= 0

V_CE= 4 V, I_C= 0.2 A

V_CE= 4 V, I_C= 1 A

V_CE= 4 V, I_C= 2 A

100

µA



I_CEO

h_FE1

h_FE2

250

0.5

h_FE3

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= 2 A, I_B= 0.25 A

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= 10 V, I_C= 0.1 A, f = 10 MHz

100

0.2

I_C= 1 A, Resistance loaded

I_B1= 0.1 A, I_B2= − 0.1 A

V_CC= 50 V

Storage time

0.7

µs

Fall time

0.15

µs

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: December 2002

SJD00299AED

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