Datasheet > 2SC5931

2SC5931

更新时间： 2024-11-02 22:03:55

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松下 - PANASONIC		/
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描述
Silicon NPN triple diffusion mesa type

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数据手册

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2SC5931 数据手册

Power Transistors

2SC5931

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor

Unit: mm

15.5 0.5

3.0 0.3

5˚

φ 3.2 0.1

5˚

I Features

• High breakdown voltage: V_CBO≥ 1700 V

• High speed switching: t_f< 200 ns

• Wide safe operation area

5˚

(4.0)

2.0 0.2

1.1 0.1

I Absolute Maximum Ratings T_C= 25°C

0.7 0.1

Parameter

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (E-B short) V_CES

Symbol

Rating

Unit

5.45 0.3

10.9 0.5

1700

5˚

1: Base

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

600

2: Collector

3: Emitter

EIAJ: SC-94

Base current

I_B

I_C

7.5

TOP-3E-A1 Package

Collector current

Marking Symbol: C5931

Internal Connection

Peak collector current ^*

Collector power dissipation

I_CP

P_C

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note) : Non-repetitive peak collector current

I Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

µA



Collector-base cutoff current (Emitter open)

I_CBO

V_CB= 1000 V, I_E= 0

V_CB= 1700 V, I_E= 0

V_EB= 7 V, I_C= 0

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_EBO

h_FE

V_CE= 5 V, I_C= 7.5 A

V_CE(sat)I_C= 7.5 A, I_B= 1.88 A

V_BE(sat)I_C= 7.5 A, I_B= 1.88 A

1.5

f_T

t_stg

t_f

V_CE= 10 V, I_C= 0.1 A, f = 0.5 MHz

MHz

µs

Storage time

I_C= 7.5 A, Resistance loaded

I_B1= 1.88 A, I_B2= −3.75 A

2.7

0.2

Fall time

µs

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: March 2004

SJD00314AED

12 3

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