2SC5945TR-E

更新时间： 2024-01-07 09:47:13

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
36页	274K
描述
Si NPN Epitaxial High Frequency Medium Power Amplifier

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数据手册

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2SC5945TR-E 数据手册

2SC5945

Si NPN Epitaxial

High Frequency Medium Power Amplifier

REJ03G0443-0300

Rev.3.00

Aug 03, 2006

Features

•

Excellent Linearity

P1dB at output = +26 dBm typ. f = 2.4 GHz

High Collector to Emitter Voltage

•

_CEO= 5 V

•

Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm).

Outline

RENESAS Package code: PWSN0006JA-A

(Package name: HWSON-6 <TNP-6DTV>)

1. Collector

2. Collector

3. Collector

4. Emitter

5. Base

6. Emitter

7. Emitter

Note: Marking is “5945”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.5

500

1^Note

150

°C

Collector power dissipation

Junction temperature

Storage temperature

Tstg

–55 to +150

Note: Value on PCB (40 x 40 x 1.0 mm)

Rev.3.00 Aug 03, 2006 page 1 of 35

12 3 4 5 6 7...36

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