是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.83 |
最大集电极电流 (IC): | 0.05 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
JESD-30 代码: | R-PDSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 800 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5946G | PANASONIC |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, High Frequency Band, Silicon, N | |
2SC5947 | SANYO |
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NPN Triple Diffused Planar Silicon Transistor - Switching Regulator Applications | |
2SC5948 | TOSHIBA |
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Silicon NPN Triple Diffused Type Power Amplifier Applications | |
2SC5948O | TOSHIBA |
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暂无描述 | |
2SC5949 | TOSHIBA |
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Transistor Silicon NPN Triple Diffused Type | |
2SC5949-O | TOSHIBA |
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Power Amplifier Applications | |
2SC5949O(Q) | TOSHIBA |
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暂无描述 | |
2SC5949-R | TOSHIBA |
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TRANSISTOR 15 A, 200 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-21F1A, 3 PIN, BIP General | |
2SC5949R(Q) | TOSHIBA |
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TRANSISTOR,BJT,NPN,200V V(BR)CEO,15A I(C),TO-264AA | |
2SC5950 | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO |