生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.54 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
最大关闭时间(toff): | 2750 ns | 最大开启时间(吨): | 500 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5823(TP-FA) | ONSEMI |
获取价格 |
TRANSISTOR,BJT,NPN,400V V(BR)CEO,1.5A I(C),TO-252VAR | |
2SC5824 | ROHM |
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Power transistor (60V, 3A) | |
2SC5824 | BL Galaxy Electrical |
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60V,3A,General Purpose NPN Bipolar Transistor | |
2SC5824_1 | ROHM |
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Power transistor (60V, 3A) | |
2SC5824_11 | ROHM |
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Power transistor (60V, 3A) | |
2SC5824_2 | ROHM |
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Power transistor (60V, 3A) | |
2SC5824T100 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | |
2SC5824T100Q | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 P | |
2SC5824T100R | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 P | |
2SC5824U | SWST |
获取价格 |
功率三极管 |