5秒后页面跳转
2SC5826TV2Q PDF预览

2SC5826TV2Q

更新时间: 2024-01-17 17:31:23
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管电视
页数 文件大小 规格书
4页 933K
描述
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN

2SC5826TV2Q 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.82
最大集电极电流 (IC):3 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SC5826TV2Q 数据手册

 浏览型号2SC5826TV2Q的Datasheet PDF文件第2页浏览型号2SC5826TV2Q的Datasheet PDF文件第3页浏览型号2SC5826TV2Q的Datasheet PDF文件第4页 
Power transistor (60V, 3A)  
2SC5826  
Features  
Dimensions (Unit : mm)  
1) High speed switching.  
(tf : Typ. : 30ns at IC = 3A)  
2) Low saturation voltage, typically  
ATV  
:
(Typ. 200mV at IC = 2A, IB = 0.2mA)  
3) Strong discharge power for inductive load and  
capacitance load.  
4) Complements the 2SA2073  
(1) Emitter  
(2) Collector  
(3) Base  
Applications  
Taping specifications  
Low frequency amplifier  
High speed switching  
Symbol : C5826  
Structure  
NPN Silicon epitaxial planar transistor  
Packaging specifications  
Package  
Taping  
TV2  
Code  
Type  
Basic ordering unit (pieces)  
2500  
2SC5826  
Absolute maximum ratings (Ta=25C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
V
V
60  
Collector-emitter voltage  
Emitter-base voltage  
60  
V
6
DC  
I
C
A
3
Collector current  
Pulsed  
I
CP  
A
6
1.0  
P
C
W
°C  
°C  
Power dissipation  
t
j
Junction temperature  
150  
t
stg  
Range of storage temperature  
55 to 150  
Pw=100ms  
www.rohm.com  
2011.03 - Rev.B  
1/3  
c
2011 ROHM Co., Ltd. All rights reserved.  

与2SC5826TV2Q相关器件

型号 品牌 描述 获取价格 数据表
2SC5826TV2R ROHM Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PI

获取价格

2SC5827 HITACHI Silicon NPN Epitaxial VHF/UHF wide band amplifier

获取价格

2SC5828 HITACHI Silicon NPN Epitaxial VHF/UHF Wide band amplifier

获取价格

2SC5829 PANASONIC For High Speed Switching

获取价格

2SC5831 SANYO Driver Applications

获取价格

2SC5832 SANYO NPN Epitaxial Planar Silicon Transistor

获取价格