Datasheet > 2SC5825_07

2SC5825_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	96K
描述
Power transistor (60V, 3A)

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5825_07 数据手册

2SC5825

Transistors

Power transistor (60V, 3A)

2SC5825

zDimensions (Unit : mm)

zFeatures

1) High speed switching.

(Tf : Typ. : 30ns at IC = 3A)

2) Low saturation voltage, typically

CPT3

(SC-63)

<SOT-428>

(Typ. 200mV at IC = 2A, IB = 0.2mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2073

(1) Base

(2) Collector

(3) Emitter

Each lead has same dimensions

Abbreviated symbol : C5825

zApplications

Low frequency amplifier

High speed switching

zStructure

NPN Silicon epitaxial planar transistor

zPackaging specifications

Package

Taping

Code

Type

Basic ordering unit (pieces)

2500

2SC5825

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Continuous

Collector current

Pulsed

∗1

∗2

∗3

°C

1.0

Power dissipation

10.0

Junction temperature

150

Tstg

Range of storage temperature

−55 to 150

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

∗3 Tc=25°C

Rev.A

1/3

12 3 4

下载PDF

与2SC5825_07相关器件

型号	品牌	描述	获取价格	数据表
2SC5825_09	ROHM	Power transistor (60V, 3A)	获取价格
2SC5825_10	ROHM	Power transistor (60V, 3A)	获取价格
2SC5825_11	ROHM	Power transistor	获取价格
2SC5825TLQ	ROHM	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, SC-	获取价格
2SC5826	ROHM	Power transistor (60V, 3A)	获取价格
2SC5826_11	ROHM	Power transistor (60V, 3A)	获取价格