Datasheet > 2SC5826_11

2SC5826_11

更新时间： 2022-09-18 09:47:20

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	934K
描述
Power transistor (60V, 3A)

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2SC5826_11 数据手册

Power transistor (60V, 3A)

2SC5826

Features

Dimensions (Unit : mm)

1) High speed switching.

(tf : Typ. : 30ns at IC = 3A)

2) Low saturation voltage, typically

ATV

(Typ. 200mV at IC = 2A, IB = 0.2mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2073

(1) Emitter

(2) Collector

(3) Base

Applications

Taping specifications

Low frequency amplifier

High speed switching

Symbol : C5826

Structure

NPN Silicon epitaxial planar transistor

Packaging specifications

Package

Taping

TV2

Code

Type

Basic ordering unit (pieces)

2500

2SC5826

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

Collector current

∗

Pulsed

1.0

°C

Power dissipation

Junction temperature

150

stg

Range of storage temperature

−55 to 150

∗Pw=100ms

www.rohm.com

2011.03 - Rev.B

1/3

12 3 4

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