Datasheet > 2SC5824_11

2SC5824_11

更新时间： 2024-02-09 13:26:13

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	934K
描述
Power transistor (60V, 3A)

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2SC5824_11 数据手册

Power transistor (60V, 3A)

2SC5824

Features

Dimensions (Unit : mm)

1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)

2) Low saturation voltage, typically

(Typ. : 200mV at IC = 2A, IB = 200mA)

3) Strong discharge power for inductive load and

capacitance load.

MPT3

4) Complements the 2SA2071.

(1)Base(Gate)

(2)Collector(Drain)

(3)Emitter(Sourse)

Each lead has same dimensions

Applications

Abbreviated symbol : UP

Low frequency amplifier

High speed switching

Structure

NPN Silicon epitaxial planar transistor

Packaging specifications

Package

Code

Taping

T100

Type

Basic ordering unit

(pieces)

1000

2SC5824

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector current

Power dissipation

∗

500

∗3

2.0

150

°C

Junction temperature

Range of storage temperature

Tstg

−55 to +150

∗

1 Pw=100ms

∗

2 Each terminal mounted on a recommended land.

3 Mounted on a 40x40x0.7(mm) ceramic substrate

www.rohm.com

2011.03 - Rev.C

1/3

12 3 4

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