Datasheet > 2SC5825_09

2SC5825_09

更新时间： 2024-09-28 06:19:43

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	178K
描述
Power transistor (60V, 3A)

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2SC5825_09 数据手册

Power transistor (60V, 3A)

2SC5825

zFeatures

zDimensions (Unit : mm)

1) High speed switching.

(Tf : Typ. : 30ns at IC = 3A)

2) Low saturation voltage, typically

CPT3

(SC-63)

<SOT-428>

(Typ. 200mV at IC = 2A, IB = 0.2mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2073

zApplications

Low frequency amplifier

High speed switching

(1) Base

(2) Collector

(3) Emitter

Each lead has same dimensions

Abbreviated symbol : C5825

zStructure

NPN Silicon epitaxial planar transistor

zPackaging specifications

Package

Taping

Code

Type

Basic ordering unit (pieces)

2500

2SC5825

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

Continuous

Pulsed

Collector current

∗1

∗2

∗3

°C

1.0

Power dissipation

10.0

Junction temperature

150

Tstg

Range of storage temperature

−55 to 150

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

∗3 Tc=25°C

www.rohm.com

2009.12 - Rev.B

1/3

12 3 4

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2SC5826TV2Q	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PI
2SC5826TV2R	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PI
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