Datasheet > 2SC5824U

2SC5824U

更新时间： 2023-12-06 20:00:36

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	251K
描述
功率三极管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5824U 数据手册

2SC5824U

NPN Silicon Epitaxial Planar Power Transistor

Features

• High speed switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Pulse Collector Current (100 ms)

I_CP

0.5 ¹⁾

2 ²⁾

Power Dissipation

P_tot

Junction Temperature

T_j

150

℃

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Unit

Max.

250 ¹⁾

Thermal Resistance - Junction to Ambient

℃/W

62.5 ²⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

²⁾Mounted on a 40 x 40 x 0.7 (mm) ceramic substrate.

1 / 5

Dated: 01/06/2023 Rev: 04

12 3 4 5

中文翻译

下载PDF

与2SC5824U相关器件

型号	品牌	获取价格	描述	数据表
2SC5825	ROHM	获取价格	Power transistor (60V, 3A)
2SC5825_07	ROHM	获取价格	Power transistor (60V, 3A)
2SC5825_09	ROHM	获取价格	Power transistor (60V, 3A)
2SC5825_10	ROHM	获取价格	Power transistor (60V, 3A)
2SC5825_11	ROHM	获取价格	Power transistor
2SC5825TLQ	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, SC-
2SC5826	ROHM	获取价格	Power transistor (60V, 3A)
2SC5826_11	ROHM	获取价格	Power transistor (60V, 3A)
2SC5826_REVB	ROHM	获取价格	High speed switching., Low saturation voltage, typically
2SC5826TV2Q	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PI