Datasheet > 2SC5825_11

2SC5825_11

更新时间： 2022-09-18 09:46:41

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	168K
描述
Power transistor

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2SC5825_11 数据手册

Power transistor (60V, 3A)

2SC5825

Features

Dimensions (Unit : mm)

1) High speed switching.

(Tf : Typ. : 30ns at IC = 3A)

2) Low saturation voltage, typically

CPT3

(SC-63)

<SOT-428>

(Typ. 200mV at IC = 2A, IB = 0.2mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2072.

Applications

Low frequency amplifier

High speed switching

(1) Base

(2) Collector

(3) Emitter

Each lead has same dimensions

Abbreviated symbol : C5825

Structure

NPN Silicon epitaxial planar transistor

Packaging specifications

Package

Taping

Code

Type

Basic ordering unit (pieces)

2500

2SC5825

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

Continuous

Pulsed

Collector current

∗1

∗2

∗3

°C

1.0

Power dissipation

10.0

Junction temperature

150

Tstg

Range of storage temperature

−55 to 150

∗1 Pw=100ms

∗2 Each terminal mounted on a recommended land

∗3 Tc=25°C

www.rohm.com

2011.10 - Rev.D

1/3

12 3 4

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