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2SC5410 PDF预览

2SC5410

更新时间: 2024-09-14 23:20:23
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2SC5410 数据手册

 浏览型号2SC5410的Datasheet PDF文件第2页 
Power Transistors  
2SC5410, 2SC5410A  
Silicon NPN triple diffusion mesa type  
For horizontal deflection output  
Unit: mm  
φ 3.3±0.2  
5.0±0.3  
20.0±0.5  
3.0  
Features  
High breakdown voltage, and high reliability through the use of a  
glass passivation layer  
High-speed switching  
1.5  
Wide area of safe operation (ASO)  
1.5  
2.0±0.3  
Absolute Maximum Ratings (T =25˚C)  
C
2.7±0.3  
3.0±0.3  
Parameter  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
1.0±0.2  
0.6±0.2  
Collector to base voltage  
1500  
1500  
V
5.45±0.3  
Collector to emitter voltage  
10.9±0.5  
600  
V
Emitter to base voltage  
Peak collector current  
Collector current  
5
V
1:Base  
2:Collector  
3:Emitter  
30  
A
1
2
3
IC  
25  
15  
A
TOP–3L Package  
Base current  
IB  
A
Collector power TC=25°C  
200  
PC  
W
dissipation  
Ta=25°C  
3.5  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
50  
1
Unit  
µA  
Collector cutoff  
2SC5410  
VCB = 1000V, IE = 0  
current  
2SC5410A  
VCB = 1500V, IE = 0  
VEB = 5V, IC = 0  
mA  
µA  
Emitter cutoff current  
IEBO  
hFE  
50  
16  
3
Forward current transfer ratio  
VCE = 5V, IC = 12A  
IC = 12A, IB = 3A  
8
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
V
V
IC = 12A, IB = 3A  
1.5  
Transition frequency  
Storage time  
fT  
tstg  
tf  
VCE = 10V, IC = 0.1A, f = 0.5MHz  
3
MHz  
µs  
4.0  
0.3  
IC = 12A, IB1 = 3A, IB2 = –6A  
Fall time  
µs  
1

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