Ordering number : ENA1081
2SC5414A
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
2SC5414A
Features
: ⏐S21e⏐2=9.5dB typ (f=1GHz).
•
High gain
•
High cut-off frequency : f =6.7GHz typ.
T
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
12
CBO
CEO
EBO
V
2
V
I
100
400
150
mA
mW
°C
°C
C
Collector Dissipation
P
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
CE
E
=1V, I =0A
10
EBO
C
h
h
1
2
=5V, I =30mA
90*
70
270*
FE
C
DC Current Gain
=5V, I =70mA
FE
C
Continued on next page.
* : The 2SC5414A is classified by 30mA hFE as follows :
Rank
E
F
h
FE
90 to 180
135 to 270
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the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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93009AB TK IM TC-00002103
No. A1081-1/6