Datasheet > 2SC5415A

2SC5415A

更新时间： 2024-11-28 02:57:23

品牌	Logo	应用领域
安森美 - ONSEMI		放大器 PC 晶体管
页数	文件大小	规格书
8页	296K
描述
RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP

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数据手册

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2SC5415A 数据手册

Ordering number : ENA1080A

2SC5415A

RF Transistor

12V, 100mA, f =6.7GHz, NPN Single PCP

http://onsemi.com

Features

High gain

: S21e ²=9dB typ (f=1GHz)

⏐ ⏐

•

High cut-off frequency : f =6.7GHz typ

Speciﬁcations

Absolute Maximum Ratings

at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

100

EBO

Collector Dissipation

When mounted on ceramic substrate (250mm²0.8mm)

800

Junction Temperature

Storage Temperature

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: PCP

7007B-004

• JEITA, JEDEC

: SC-62, SOT-89, TO-243

•

Minimum Packing Quantity : 1,000 pcs./reel

Top View

2SC5415AE-TD-E

2SC5415AF-TD-E

4.5

1.6

Packing Type: TD

Marking

1.5

RANK

0.4

0.5

0.4

1.5

3.0

Electrical Connection

0.75

1 : Base

2 : Collector

3 : Emitter

Bottom View

PCP

Semiconductor Components Industries, LLC, 2013

August, 2013

90512 TKIM/93009AB TKIM TC-00002100 No. A1080-1/8

12 3 4 5 6 7 8

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