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2SC5414E PDF预览

2SC5414E

更新时间: 2024-01-07 14:07:33
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管放大器
页数 文件大小 规格书
6页 49K
描述
BJT

2SC5414E 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.5 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):6700 MHzBase Number Matches:1

2SC5414E 数据手册

 浏览型号2SC5414E的Datasheet PDF文件第2页浏览型号2SC5414E的Datasheet PDF文件第3页浏览型号2SC5414E的Datasheet PDF文件第4页浏览型号2SC5414E的Datasheet PDF文件第5页浏览型号2SC5414E的Datasheet PDF文件第6页 
Ordering number:ENN5910  
NPN Epitaxial Planar Silicon Transistor  
2SC5414  
High-Frequency  
Low-Noise Amplifier Applications  
Features  
Package Dimensions  
unit:mm  
· High gain : S21e 2=9.5dB typ (f=1GHz).  
· High cutoff frequency : f =6.7GHz typ.  
T
2004B  
[2SC5414]  
5.0  
4.0  
4.0  
0.45  
0.5  
0.44  
0.45  
1 : Base  
1
2
3
2 : Emitter  
3 : Collector  
SANYO : NP  
1.3  
1.3  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Collector-to-Base Voltage  
V
20  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
12  
V
CEO  
V
2
100  
V
EBO  
I
mA  
mW  
˚C  
˚C  
C
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
400  
C
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
V
V
V
V
V
V
=10V, I =0  
E
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
CB  
CE  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
10  
EBO  
C
h
h
1
=5V, I =30mA  
C
=5V, I =70mA  
C
=5V, I =30mA  
C
=5V, f=1MHz  
90*  
270*  
FE  
2
70  
5
FE  
f
Gain-Bandwidth Product  
Output Capacitance  
6.7  
1.0  
0.6  
9.5  
1.1  
GHz  
pF  
T
Cob  
1.5  
2.0  
Reverse Transfer Capacitance  
Forward Transfer Gain  
Noise Figure  
Cre  
=5V, f=1MHz  
pF  
| S21e |2  
NF  
8
dB  
=5V, I =30mA, f=1GHz  
C
=5V, I =7mA, f=1GHz  
C
dB  
* The 2SC5414 is classified by 30mA h as follows :  
FE  
90  
E
180 135  
F
270  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
30300TS (KOTO) TA-1023 No.5910–1/6  

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