5秒后页面跳转
2SC5416 PDF预览

2SC5416

更新时间: 2024-01-09 01:19:49
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
4页 48K
描述
Inverter Lighting Applications

2SC5416 技术参数

生命周期:Transferred零件包装代码:TO-220FI
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.45Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
最大集电极电流 (IC):4 A集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SC5416 数据手册

 浏览型号2SC5416的Datasheet PDF文件第2页浏览型号2SC5416的Datasheet PDF文件第3页浏览型号2SC5416的Datasheet PDF文件第4页 
Ordering number : EN5696  
NPN Triple Diffused Planar Silicon Transistor  
2SC5416  
Inverter Lighting Applications  
Features  
• High breakdown voltage.  
Package Dimensions  
unit: mm  
• High reliability (Adoption of HVP process).  
• Adoption of MBIT process.  
2079B-TO220FI (LS)  
[2SC5416]  
4.5  
10.0  
2.8  
3.2  
0.9  
1.2  
0.7  
0.75  
1 : Base  
1
2
3
2 : Collector  
3 : Emitter  
SANYO : TO220FI (LS)  
2.55  
2.55  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
1000  
CBO  
CEO  
EBO  
450  
V
9
V
I
C
I
4
A
Collector Current (Pulse)  
Collector Dissipation  
8
A
CP  
P
2
25  
W
W
°C  
°C  
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
Parameter  
Symbol  
Conditions  
=450V, I =0  
Unit  
min  
typ  
max  
Collector Cutoff Current  
Collector Cutoff Current  
Collector Sustain Voltage  
Emitter Cutoff Current  
C-E Saturation Voltage  
B-E Saturation Voltage  
DC Current Gain  
I
I
V
V
10  
µA  
mA  
V
CBO  
CES  
CB  
CE  
E
=1000V, R =0  
1.0  
BE  
V
I =100mA, I =0  
450  
CEO(sus)  
EBO  
C
V
B
I
=9V, I =0  
1.0  
1.0  
1.5  
50  
mA  
V
EB  
C
V
V
I =2A, I =0.4A  
C B  
CE(sat)  
BE(sat)  
FE(1)  
FE(2)  
stg  
I =2A, I =0.4A  
V
C
V
B
h
h
=5V, I =0.1A  
30  
10  
40  
CE  
CE  
C
V
=5V, I =1.5A  
C
Storage Time  
Fall Time  
t
t
I =2A, I =0.4A, I =–0.8A  
2.5  
µs  
µs  
C
B1 B2  
I =2A, I =0.4A, I =–0.8A  
0.15  
f
C
B1 B2  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
51598TS (KOTO) TA-1059 No.5696-1/4  

与2SC5416相关器件

型号 品牌 描述 获取价格 数据表
2SC5416_15 JMNIC Silicon NPN Power Transistors

获取价格

2SC5416_2015 JMNIC Silicon NPN Power Transistors

获取价格

2SC5416LS Wing Shing NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS)

获取价格

2SC5416LS ONSEMI TRANSISTOR,BJT,NPN,450V V(BR)CEO,4A I(C),SOT-186

获取价格

2SC5417 SANYO Inverter Lighting Applications

获取价格

2SC5417 JMNIC Silicon NPN Power Transistors

获取价格