2SC5431-EB-A

更新时间： 2024-11-24 13:04:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	57K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5431-EB-A 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5431

NPN EPITAXIAL SILICON TRANSISTOR

FOR UHF TUNER OSC/MIX

FEATURE

PACKAGE DIMENSIONS (inmm)

•

Ultra super mini-mold thin flat package

(1.4 mm × 0.8 mm × 0.59 mm: TYP.)

Contains same chip as 2SC5004

1.4 ± 0.05

0.8 ± 0.1

•

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

100

125

PIN CONNECTIONS

1: Emitter

Tstg

–65 to +125

2: Base

3: Collector

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

ICBO

TEST CONDITIONS

VCB = 15 V, IE = 0

MIN.

TYP.

MAX.

100

0.5

UNIT

IEBO

VEB = 1 V, IC = 0

Collector to Emitter Saturation

Voltage

VCE (sat)

hFE = 10, IC = 5 mA

DC Current Gain

hFE

VCE = 5 V, IC = 5 mA^{Note 1}

120

1.2

Gain Bandwidth Product

Reverse Transfer Capacitance

Insertion Power Gain

VCE = 5 V, IC = 5 mA, f = 1 GHz

VCB = 5 V, IE = 0, f = 1 MHz^{Note 2}

VCE = 5 V, IC = 5 mA, f = 1 GHz

3.0

4.3

0.6

GHz

Cre

|S21e|²

5.0

Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13075EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SC5431-EB-A相关器件

型号	品牌	获取价格	描述	数据表
2SC5431EB-A	NEC	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,60MA I(C),SOT-416VAR
2SC5431-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5431FB-T1	NEC	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,60MA I(C),SOT-416VAR
2SC5431-T1	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5431-T1EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5431-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5432	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC5432(NE856M03)	ETC	获取价格	Discrete
2SC5432-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5432-EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic