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2SC5432EB-T1-A PDF预览

2SC5432EB-T1-A

更新时间: 2024-11-25 10:51:43
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
10页 56K
描述
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR

2SC5432EB-T1-A 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5432  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Contains same chip as 2SC5006  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5432  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (collector) face the perforation side of the tape  
2SC5432-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3
100  
V
mA  
mW  
°C  
°C  
P
tot Note  
125  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Free air  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10100EJ01V0DS (1st edition)  
The mark shows major revised points.  
(Previous No. P13076EJ1V0DS00)  
Date Published February 2002 CP(K)  
Printed in Japan  
NEC Corporation 1998  
NEC Compound Semiconductor Devices 2002  

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