Datasheet > 2SC5433EB-T1-A

2SC5433EB-T1-A

更新时间： 2024-11-27 14:46:23

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	56K
描述
TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SMT

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中文翻译

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技术参数
数据手册

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2SC5433EB-T1-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.065 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.125 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	4500 MHz
Base Number Matches：	1

2SC5433EB-T1-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5433

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Contains same chip as 2SC5007

Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5433

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5433-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

1.5

°C

tot ^Note

125

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10101EJ01V0DS (1st edition)

The mark • shows major revised points.

(Previous No. P13077EJ1V0DS00)

Date Published February 2002 CP(K)

Printed in Japan

NEC Corporation 1998

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...10

中文翻译

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与2SC5433EB-T1-A相关器件

型号	品牌	获取价格	描述	数据表
2SC5433FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5433-FB-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5433FB-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SMT
2SC5433FB-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SMT
2SC5433-T1-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5433-T1EB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5433-T1EB-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5433-T1FB-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5434	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5434	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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