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2SC5434-FB PDF预览

2SC5434-FB

更新时间: 2024-11-27 12:58:27
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
8页 63K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

2SC5434-FB 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:ULTRA SUPER MINIMOLD PACKAGE-3Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.7 pF集电极-发射极最大电压:10 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-F3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80000 MHz
Base Number Matches:1

2SC5434-FB 数据手册

 浏览型号2SC5434-FB的Datasheet PDF文件第2页浏览型号2SC5434-FB的Datasheet PDF文件第3页浏览型号2SC5434-FB的Datasheet PDF文件第4页浏览型号2SC5434-FB的Datasheet PDF文件第5页浏览型号2SC5434-FB的Datasheet PDF文件第6页浏览型号2SC5434-FB的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
SILICON TRANSISTOR  
2SC5434  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
FEATURE  
PACKAGE DIMENSIONS (in mm)  
Ultra super mini-mold thin flat package  
1.4 ± 0.05  
0.8 ± 0.1  
(1.4 mm × 1.8 mm × 0.59 mm: TYP.)  
Contains same chip as 2SC5008  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
2
1
PARAMETER  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
3
20  
10  
1.5  
V
V
35  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
125  
Tj  
150  
PIN CONNECTIONS  
1: Emitter  
Tstg  
–65 to +150  
2: Base  
3: Collector  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PARAMETER  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB = 10 V, IE = 0  
MIN.  
TYP.  
MAX.  
1000  
1000  
145  
UNIT  
nA  
IEBO  
VEB = 1 V, IC = 0  
nA  
hFE  
VCE = 3 V, IC = 5 mANote 1  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCB = 3 V, IE = 0, f = 1 MHzNote 2  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
80  
Gain Bandwidth Product  
Reverse Transfer Capacitance  
Insertion Power Gain  
Noise Figure  
fT  
5.5  
80  
0.3  
7.5  
1.9  
GHz  
pF  
Cre  
0.7  
3.2  
|S21e|2  
NF  
5.5  
dB  
dB  
Notes 1. Pulse measurement PW 350 µs, duty cycle 2 %  
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when  
emitter pin is connected to the guard pin.  
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.  
The information in this document is subject to change without notice.  
Document No. P13145EJ1V0DS00 (1st edition)  
Date Published February 1998 N CP(K)  
Printed in Japan  
1998  
©

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