Datasheet > 2SC5436EB-T1

2SC5436EB-T1

更新时间： 2024-11-21 09:33:27

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	69K
描述
TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SMT

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中文翻译

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数据手册

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2SC5436EB-T1 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5436

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Contains same chip as 2SC5186

Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5436

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5436-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

°C

tot ^Note

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10104EJ01V0DS (1st edition)

The mark • shows major revised points.

(Previous No. P13079EJ1V0DS00)

Date Published February 2002 CP(K)

Printed in Japan

NEC Corporation 1998

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...12

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与2SC5436EB-T1相关器件

型号	品牌	获取价格	描述	数据表
2SC5436FB	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIF
2SC5436-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5436-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5436FB-T1	NEC	获取价格	TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SMT
2SC5436FB-T1-A	NEC	获取价格	TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SMT
2SC5436-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5437	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC5437(NE688M03)	ETC	获取价格	Discrete
2SC5437-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5437-EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE