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2SC5437-FB-A

更新时间： 2024-11-20 13:04:19
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日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
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2SC5437-FB-A 数据手册

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PRELIMINARY DATA SHEET  
SILICON TRANSISTOR  
2SC5437  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
FEATURE  
PACKAGE DIMENSIONS (in mm)  
•
Ultra super mini-mold thin flat package  
1.4 ± 0.05  
0.8 ± 0.1  
(1.4 mm × 0.8 mm × 0.59 mm: TYP.)  
•
Contains same chip as 2SC5195  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
2
1
PARAMETER  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
3
9
6
V
2
100  
V
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
125  
Tj  
150  
PIN CONNECTIONS  
1: Emitter  
Tstg  
–65 to +150  
2: Base  
3: Collector  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PARAMETER  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB = 5 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
100  
145  
0.8  
UNIT  
nA  
IEBO  
VEB = 1 V, IC = 0  
nA  
hFE  
VCE = 1 V, IC = 3 mANote 1  
80  
4.0  
3.0  
Reverse Transfer Capacitance  
Gain Bandwidth Product (1)  
Gain Bandwidth Product (2)  
Insertion Power Gain (1)  
Insertion Power Gain (2)  
Noise Figure (1)  
Cre  
VCB = 1 V, IE = 0, f = 1 MHzNote 2  
VCE = 1 V, IC = 3 mA, f = 2 GHz  
VCE = 3 V, IC = 20 mA, f = 2 GHz  
VCE = 1 V, IC = 3 mA, f = 2 GHz  
VCE = 3 V, IC = 20 mA, f = 2 GHz  
VCE = 1 V, IC = 3 mA, f = 2 GHz  
VCE = 3 V, IC = 7 mA, f = 2 GHz  
0.7  
5.0  
9.5  
4.0  
8.0  
1.9  
1.7  
pF  
GHz  
GHz  
dB  
fT (1)  
fT (2)  
|S21e|2 (1)  
|S21e|2 (2)  
NF (1)  
NF (2)  
dB  
2.5  
dB  
Noise Figure (2)  
dB  
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %  
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when  
emitter pin is connected to the guard pin.  
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.  
The information in this document is subject to change without notice.  
Document No. P13146EJ1V0DS00 (1st edition)  
Date Published February 1998 N CP(K)  
Printed in Japan  
1998  
©
12345678

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