2SC5437-FB-A

更新时间： 2024-09-28 13:04:19

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
8页	65K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5437-FB-A 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5437

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE

PACKAGE DIMENSIONS (in mm)

•

Ultra super mini-mold thin flat package

1.4 ± 0.05

0.8 ± 0.1

(1.4 mm × 0.8 mm × 0.59 mm: TYP.)

•

Contains same chip as 2SC5195

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

100

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

125

150

PIN CONNECTIONS

1: Emitter

Tstg

–65 to +150

2: Base

3: Collector

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

VCB = 5 V, IE = 0

MIN.

TYP.

MAX.

100

145

0.8

UNIT

IEBO

VEB = 1 V, IC = 0

hFE

VCE = 1 V, IC = 3 mA^{Note 1}

4.0

3.0

Reverse Transfer Capacitance

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1)

Cre

VCB = 1 V, IE = 0, f = 1 MHz^{Note 2}

VCE = 1 V, IC = 3 mA, f = 2 GHz

VCE = 3 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 3 mA, f = 2 GHz

VCE = 3 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 3 mA, f = 2 GHz

VCE = 3 V, IC = 7 mA, f = 2 GHz

0.7

5.0

9.5

4.0

8.0

1.9

1.7

GHz

fT (1)

fT (2)

|S21e|²(1)

|S21e|²(2)

NF (1)

NF (2)

2.5

Noise Figure (2)

Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13146EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SC5437-FB-A相关器件

型号	品牌	获取价格	描述	数据表
2SC5437-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5437-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5437-T1EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5437-T1FB	NEC	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5437-T1FB-A	NEC	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5439	ISC	获取价格	Silicon NPN Power Transistors
2SC5439	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTA SWITCHINGM DC-DC CONVERTER, INVE
2SC5439	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC5439	JMNIC	获取价格	Silicon NPN Power Transistors
2SC5439_06	TOSHIBA	获取价格	Silicon NPN Triple Diffused Type Switching Regulator Applications