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2SC5452

更新时间： 2024-11-23 22:52:47
品牌 Logo 应用领域
三洋 - SANYO 晶体显示器晶体管输出应用放大器局域网
页数 文件大小 规格书
4页 44K
描述
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

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中文翻译

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2SC5452 技术参数

生命周期：Obsolete零件包装代码：TO-3PML
包装说明：TO-3PML, 3 PIN针数：3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.84其他特性：HIGH RELIABILITY
最大集电极电流 (IC)：20 A集电极-发射极最大电压：800 V
配置：SINGLE最小直流电流增益 (hFE)：4
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN最大功率耗散 (Abs)：75 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SC5452 数据手册

 浏览型号2SC5452的Datasheet PDF文件第2页浏览型号2SC5452的Datasheet PDF文件第3页浏览型号2SC5452的Datasheet PDF文件第4页 
Ordering number:EN5957A  
NPN Triple Diffused Planar Silicon Transistor  
2SC5452  
Ultrahigh-Definition CRT Display  
Horizontal Deflection Output Applications  
Features  
Package Dimensions  
unit:mm  
· High speed.  
· High breakdown voltage (V  
· High reliability (Adoption of HVP process).  
· Adoption of MBIT process.  
=1600V).  
CBO  
2039D  
[2SC5452]  
16.0  
5.6  
3.4  
3.1  
2.8  
2.0  
2.0  
1.0  
0.6  
1 : Base  
1
2
3
2 : Collector  
3 : Emitter  
5.45  
5.45  
SANYO : TO-3PML  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
1600  
800  
6
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
20  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
40  
A
CP  
P
3
W
W
˚C  
˚C  
C
Tc=25˚C  
75  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
I
=1600V, R =0  
CE BE  
mA  
V
CES  
Collector-to-Emitter Sustain Voltage  
Emitter Cutoff Current  
V
=100mA, I =0  
B
800  
CEO(sus)  
C
I
V
V
V
V
=4V, I =0  
1.0  
10  
30  
7
mA  
µA  
EBO  
EB  
CB  
CE  
CE  
C
Collector Cutoff Current  
I
=800V, I =0  
CBO  
E
h
h
1
=5V, I =1A  
C
=5V, I =14A  
C
15  
4
FE  
FE  
DC Current Gain  
2
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
61099TS (KOTO) TA-1384 No.5957–1/4  
1234

中文翻译

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与2SC5452相关器件

型号 品牌 获取价格 描述 数据表
2SC5453 SANYO

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 		Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
2SC5454 NEC

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 		NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5454 RENESAS

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 		NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5454(NE67739) NEC

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 		Discrete
2SC5454FB RENESAS

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 		L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4
2SC5454-FB NEC

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 		暂无描述
2SC5454-FB-A NEC

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 		RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC5455 RENESAS

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 		NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5455 NEC

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 		NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5455(NE67839) NEC

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 		Discrete

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