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2SC5459_07 PDF预览

2SC5459_07

更新时间: 2024-02-08 13:07:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 142K
描述
Silicon NPN Triple Diffused Type

2SC5459_07 数据手册

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2SC5459  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC5459  
Switching Regulator Applications  
Unit: mm  
High-Voltage Switching Applications  
DC-DC Converter Applications  
High-speed switching: t = 0.3 μs (max) (I = 1.2 A)  
f
C
High collector breakdown voltage: V  
= 400 V  
CEO  
High DC current gain: h  
= 20 (min) (I = 0.3 A)  
C
FE  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
600  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
400  
7
DC  
I
3
C
Collector current  
Base current  
A
A
Pulse  
I
5
CP  
JEDEC  
JEITA  
I
1
2.0  
B
SC-67  
2-10R1A  
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
TOSHIBA  
C
25  
Weight: 1.7 g (typ.)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2007-04-26  

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