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2SC5464FT_07

更新时间： 2024-09-20 04:26:07
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 112K
描述
Silicon NPN Epitaxial Planar Type

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2SC5464FT_07 数据手册

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2SC5464FT  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC5464FT  
VHF~UHF Band Low Noise Amplifier Applications  
Unit: mm  
•
•
Low noise figure, high gain.  
NF = 1.1dB, |S |2 = 12dB (f = 1 GHz)  
21e  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
12  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
3
V
I
60  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
30  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-1B1A  
Weight: 0.0022 g (typ.)  
Microwave Characteristics (Ta = 25°C)  
Characteristics  
Transition frequency  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
f
V
V
V
V
V
= 8 V, I = 15 mA  
5
7
17.5  
12  
⎯
⎯
⎯
⎯
2
GHz  
T
CE  
CE  
CE  
CE  
CE  
C
⎪S ⎪2 (1)  
= 8 V, I = 15 mA, f = 500 MHz  
⎯
8
21e  
C
Insertion gain  
Noise figure  
dB  
dB  
⎪S ⎪2 (2)  
= 8 V, I = 15 mA, f = 1 GHz  
21e  
C
NF (1)  
NF (2)  
= 8 V, I = 5 mA, f = 500 MHz  
⎯
⎯
1
C
= 8 V, I = 5 mA, f = 1 GHz  
1.1  
C
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
= 10 V, I = 0  
⎯
⎯
⎯
⎯
1
1
μA  
μA  
CBO  
CB  
EB  
E
I
= 1 V, I = 0  
C
EBO  
h
FE  
DC current gain  
V
V
= 8 V, I = 15 mA  
80  
⎯
240  
CE  
CB  
C
(Note 1)  
Output capacitance  
C
⎯
⎯
0.75  
0.5  
⎯
⎯
pF  
pF  
ob  
= 8 V, I = 0, f = 1 MHz (Note 2)  
E
Reverse transfer capacitance  
C
re  
Note 1:  
Note 2:  
h
classification O: 80~160, Y: 120~240  
FE  
C
is measured by 3 terminal method with capacitance bridge.  
re  
1
2007-11-01  
123

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