Datasheet > 2SC5466_04

2SC5466_04

更新时间： 2024-11-24 07:31:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	125K
描述
Dynamic Focus Applications

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中文翻译

获取价格

数据手册

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2SC5466_04 数据手册

2SC5466

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5466

Dynamic Focus Applications

Unit: mm

High Voltage Switching Applications

High Voltage Amplifier Applications

•

High voltage: V = 800 V

CEO

Maximum Ratings

(Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

800

CBO

CEO

EBO

800

Base current

Ta = 25°C

Tc = 25°C

2.0

Collector power

dissipation

JEDEC

JEITA

―

SC-67

2-10R1A

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

Weight: 1.7 g (typ.)

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

= 640 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

1.0

―

µA

CBO

= 5 V, I = 0

EBO

DC current gain

= 5 V, I = 7 mA

―

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

= 20 mA, I = 4 mA

―

1.0

1.5

―

CE (sat)

BE (sat)

= 20 mA, I = 4 mA

―

= 10 V, I = 3 mA

5.5

2.2

MHz

Collector output capacitance

= 100 V, f = 1 MHz

―

Marking

C5466

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2004-07-26

12 3 4

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