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2SC5473 PDF预览

2SC5473

更新时间: 2024-11-23 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 37K
描述
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

2SC5473 技术参数

生命周期:Obsolete零件包装代码:SC-82
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:6 V配置:SINGLE
最小直流电流增益 (hFE):80最高频带:L BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):12000 MHzBase Number Matches:1

2SC5473 数据手册

 浏览型号2SC5473的Datasheet PDF文件第2页 
Transistor  
2SC5473 (Tentative)  
Silicon NPN epitaxial planer type  
For low-voltage low-noise high-frequency oscillation  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.10  
0.425  
Features  
High transition frequency fT.  
High gain of 8.9dB and low noise of 1.8dB at 3V.  
Optimum for RF amplification of a portable telephone and  
pager.  
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
Absolute Maximum Ratings (Ta=25˚C)  
0.2±0.1  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
1:Emitter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
9
2:Collector  
3:Emitter  
4:Base  
6
V
EIAJ:SC–82  
S-Mini Type Package  
1
30  
V
mA  
mW  
˚C  
Marking symbol : 3A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
1
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Collector output capacitance  
Transition frequency  
Noise figure  
VCB = 9V, IE = 0  
IEBO  
hFE  
Cob  
fT  
VEB = 1V, IC = 0  
1
µA  
VCE = 3V, IC = 10mA  
80  
200  
VCB = 3V, IE = 0, f = 1MHz  
VCE = 3V, IC = 10mA, f = 2GHz  
VCE = 3V, IC = 3mA, f = 1.5GHz  
VCE = 3V, IC = 10mA, f = 2GHz  
0.4  
12.0  
1.8  
pF  
GHz  
dB  
NF  
2
Foward transfer gain  
| S21e  
|
8.9  
dB  
1

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